Title :
Room-temperature terahertz emission from nanometer field-effect transistors
Author :
Dyakonova, N. ; El Fatimy, A. ; Lusakowskil, J. ; Knap, Wojciech ; Dyakonov, M.I. ; Poisson, M.A. ; Morvan, E. ; Bollaert, S. ; Shchepetov, A. ; Roelens, Y. ; Gaquiere, Ch. ; Theron, D. ; Cappy, A.
Author_Institution :
Univ. Montpellier 2, Montpellier
Abstract :
Generation of THz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high mobility transistors is observed at room temperature. Spectral analysis of the emitted radiation is presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; nanoelectronics; submillimetre wave generation; wide band gap semiconductors; AlGaN-GaN; InAlAs-InGaAs; high mobility transistors; nanometer field-effect transistors; room-temperature terahertz emission; spectral analysis; Aluminum gallium nitride; FETs; Gallium nitride; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Plasma temperature; Plasma waves;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368353
