Structural and electrical characterization of epitaxial DyP/GaAs and DyAs/GaAs grown by MBE

Author

Lee, P.P. ; Hwu, R.J. ; Sadwick, Larry P. ; Balasubramaniam ; Kumar, B.R. ; Lai, T.C. ; Chu, S.N.G. ; Alvis, R. ; Lareau, R.T. ; Wood, M.C.

Author_Institution

Dept. of Mater. Sci. & Eng., Utah Univ., Salt Lake City, UT, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

159

Lastpage

162

Abstract

Details of the structural and electrical properties of epitaxial DyP/GaAs and DyAs/GaAs are reported. Both DyP and DyAs have been grown by solid source MBE with growth temperatures ranging from 500 to 600°C and growth rates between 0.5 and 0.7 μm/hr. DyP epilayers are n-type with measured electron concentrations on the order of 3 to 4×10²⁰ cm^-3, room temperature mobilities of 250 to 300 cm²/Vs, and a barrier height of about 0.81 eV to GaAs at room temperature. DyAs epilayers are also n-type with concentrations of 1 to 2×10²¹ cm^-3, and mobilities between 25 and 40 cm²/Vs. DyP is stable in air with no signs of oxidation even after months of exposure

Keywords

dysprosium compounds; electron density; electron mobility; metallic epitaxial layers; 293 K; 500 to 600 C; DyAs; DyP; GaAs; MBE layers; barrier height; electrical characterization; electron concentrations; epitaxial layers; molecular beam epitaxial layers; n-type material; room temperature mobilities; structural characterization; Cities and towns; Diffraction; Gallium arsenide; Lattices; Materials science and technology; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface contamination; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711604

Filename

711604