Title :
Design of 1 V bandgap reference without native MOS transistor in 0.18 µm CMOS technology
Author :
Arivazhagan, P. ; Bhattacharyya, Tarun Kanti
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, Kharagpur, India
Abstract :
This paper presents a bandgap reference without use of native MOS transistor (low threshold voltage (Vth) devices), designed in 0.18 μm CMOS technology with a supply voltage of 1 V consuming 47 μW at room temperature. It generates a reference voltage of 540 mV and has a temperature coefficient of 220 ppm/°C from -40°C to 125°C.
Keywords :
CMOS analogue integrated circuits; energy gap; operational amplifiers; CMOS technology; bandgap reference; low threshold voltage; op-amp; power 47 muW; size 0.18 mum; temperature -40 C to 125 C; temperature 293 K to 298 K; temperature coefficient; voltage 1 V; voltage 540 mV; Artificial intelligence; CMOS integrated circuits; CMOS technology; Layout; Transistors; Bandgap core; Op-amp; Supply independent; startup;
Conference_Titel :
Computing Communication & Networking Technologies (ICCCNT), 2012 Third International Conference on
Conference_Location :
Coimbatore
DOI :
10.1109/ICCCNT.2012.6396028
