Title :
Localized doping using silicon ink technology for high efficiency solar cells
Author :
Alberi, K. ; Scardera, G. ; Moutinho, H. ; Reedy, R.C. ; Romero, M.J. ; Rogojina, E. ; Kelman, M. ; Poplavskyy, D. ; Young, D.L. ; Lemmi, F. ; Antoniadis, H.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.
Keywords :
scanning electron microscopy; secondary ion mass spectroscopy; solar cells; Innovalight silicon ink technology; controlled localized doping; high efficiency solar cells; ink-printed boundaries; lateral dopant profiles; pyramidal surfaces; scanning capacitance microscopy; scanning electron microscopy dopant contrast imaging; secondary ion mass spectrometry; selective emitter structures; uniform doping; Doping; Ink; Photovoltaic cells; Scanning electron microscopy; Silicon; Surface treatment;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5614442
