DocumentCode
2737176
Title
Wide frequency deviation and temperature stable VCO using SiO2 /36° Y-X LiTaO3 resonator
Author
Satoh, K. ; Fujiwara, Y. ; Hashimoto, K.
Author_Institution
Fujitsu Ltd., Kawasaki, Japan
fYear
1990
fDate
4-7 Dec 1990
Firstpage
99
Abstract
An SiO2/36° Y-X LiTaO3 substrate which has an excellent temperature characteristic and a high electromechanical coupling coefficient has been prepared. The temperature coefficient of frequency (TCF) is zero, and the electromechanical coupling coefficient is 5.2% when the thickness of SiO2(H/λ) is 21%. An energy-trapped structure which is a one-port-type resonator connects a loading capacitance in series to a transducer. Using this resonator, a voltage-controlled oscillator (VCO) with an excellent temperature characteristic and a wide frequency deviation larger than 800 ppm/V is obtained
Keywords
crystal resonators; lithium compounds; radiofrequency oscillators; silicon compounds; surface acoustic wave devices; variable-frequency oscillators; 74.25 MHz; LiTaO3 substrate; SAW resonator; SiO2; SiO2-LiTaO3; VCO; Y-X substrate; electromechanical coupling coefficient; energy-trapped structure; loading capacitance; one-port-type resonator; temperature characteristic; temperature coefficient of frequency; voltage-controlled oscillator; wide frequency deviation; Acoustic transducers; Capacitance; Electrodes; Fingers; Frequency; Hybrid integrated circuits; Plasma temperature; Surface acoustic waves; Surface impedance; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1990. Proceedings., IEEE 1990
Conference_Location
Honolulu, HI
Type
conf
DOI
10.1109/ULTSYM.1990.171333
Filename
171333
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