DocumentCode
2737218
Title
Optimization of ZnO/Ag back-reflectors for silicon thin film solar cell applications
Author
Cho, Jun-Sik ; Baek, Sanghun ; Lee, Jeong Chul ; Park, Sang-Hyun ; Song, Jinsoo ; Yoon, Kyung Hoon
Author_Institution
Photovoltaic Res. Center, Korea Inst. of Energy Res., Deajeon, South Korea
fYear
2010
fDate
20-25 June 2010
Abstract
Sputtered zinc oxide/silver double layers as a back-reflector for silicon thin film solar cells with nip configuration were prepared on the flexible metal substrates. Surface morphologies of Ag films were controlled by changing the deposition conditions such as substrate temperature and film thickness to improve the total/diffused reflectance and light scattering properties of ZnO/Ag back reflectors. The surface roughness of Ag films deposited on the stainless steel substrates increases from 14.1 nm to 36.1 nm with increasing the substrate temperature from room temperature to 500°C. Although the total reflectance of ZnO/Ag back reflectors shows minor variation, the diffused reflectance is enhanced with increasing the surface roughness of Ag films, meaning the light scattering on the rough surfaces is improved significantly. It is also found that the surface roughness of Ag films increases with the film thickness at fixed substrate temperature, resulting in the enhancement of diffused reflectance of ZnO/Ag back-reflectors. Silicon thin film solar cells are fabricated on the back-reflectors with the different surface roughness of Ag layers by PECVD and their cell performances are investigated systematically.
Keywords
II-VI semiconductors; plasma CVD; rough surfaces; silicon; silver; solar cells; stainless steel; surface morphology; surface roughness; thin film devices; wide band gap semiconductors; zinc compounds; PECVD; ZnO-Ag; back reflectors; film thickness; flexible metal substrates; light scattering property; silicon thin film solar cell; sputtered zinc oxide-silver double layers; stainless steel substrate temperature; surface morphology; surface roughness; temperature 293 K to 298 K; temperature 500 degC; Substrates; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5614447
Filename
5614447
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