1–5GHz wideband low noise amplifier using active inductor

Author

Galal, A.I.A. ; Pokharel, R.K. ; Kanaya, H. ; Yoshida, K.

Author_Institution

Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan

Volume

1

fYear

2010

fDate

20-23 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

An ultra-wideband low noise amplifier employs shunt resistive feedback is presented. LNA chip area has been reduced significantly using active inductor load. The LNA is designed and fabricated in the standard 0.18μm CMOS technology. The UWB LNA exhibit a measured gain of 12.5 to 13dB, and a noise figure of 3.8 dB over 1-5 GHz frequencies. S11 is less than -8dB within the entire band of frequencies while the IIP3 is -1 dBm at 3 GHz. Compared with their traditional counterparts, the proposed LNA consumes less chip area 0.16 mm² and presents better gain and noise figure performance.

Keywords

CMOS integrated circuits; MMIC amplifiers; inductors; low noise amplifiers; CMOS technology; UWB LNA; active inductor; frequency 1 GHz to 5 GHz; gain 12.5 dB to 13 dB; noise figure 3.8 dB; size 0.18 mum; ultrawideband low noise amplifier; Active inductors; CMOS integrated circuits; CMOS technology; Gain; Noise; Noise figure; Radio frequency; Active inductor; CMOS; active load; low noise amplifier; ultra-wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband (ICUWB), 2010 IEEE International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-5305-4

Electronic_ISBN

978-1-4244-5306-1

Type

conf

DOI

10.1109/ICUWB.2010.5614455

Filename

5614455