Title :
1–5GHz wideband low noise amplifier using active inductor
Author :
Galal, A.I.A. ; Pokharel, R.K. ; Kanaya, H. ; Yoshida, K.
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
Abstract :
An ultra-wideband low noise amplifier employs shunt resistive feedback is presented. LNA chip area has been reduced significantly using active inductor load. The LNA is designed and fabricated in the standard 0.18μm CMOS technology. The UWB LNA exhibit a measured gain of 12.5 to 13dB, and a noise figure of 3.8 dB over 1-5 GHz frequencies. S11 is less than -8dB within the entire band of frequencies while the IIP3 is -1 dBm at 3 GHz. Compared with their traditional counterparts, the proposed LNA consumes less chip area 0.16 mm2 and presents better gain and noise figure performance.
Keywords :
CMOS integrated circuits; MMIC amplifiers; inductors; low noise amplifiers; CMOS technology; UWB LNA; active inductor; frequency 1 GHz to 5 GHz; gain 12.5 dB to 13 dB; noise figure 3.8 dB; size 0.18 mum; ultrawideband low noise amplifier; Active inductors; CMOS integrated circuits; CMOS technology; Gain; Noise; Noise figure; Radio frequency; Active inductor; CMOS; active load; low noise amplifier; ultra-wideband (UWB);
Conference_Titel :
Ultra-Wideband (ICUWB), 2010 IEEE International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-5305-4
Electronic_ISBN :
978-1-4244-5306-1
DOI :
10.1109/ICUWB.2010.5614455
