Title :
A 0.9mW 0.01-1.4GHz Wideband CMOS Low Noise Amplifier for Low-Band Ultra Wideband Applications
Author :
Liu, Tsung-Te ; Wang, Chorng-Kuang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
This paper presents a low-power wideband CMOS LNA for low-band UWB application. An NMOS common-gate shunted by a PMOS common-source input stage achieves a wideband impedance matching -7dB from 10MHz to 1.4GHz. RF cascaded by an NMOS common-source output stage sharing the identical input stage bias current 500muA, the 0.18-mum LNA provides a gain 22dB and is insensitive to process variations. The LNA consumes 0.9mW from a 1.8-V supply and occupies an area of 0.03mm2
Keywords :
CMOS integrated circuits; MOSFET; UHF amplifiers; impedance matching; low noise amplifiers; ultra wideband technology; wideband amplifiers; 0.01 to 1.4 GHz; 0.18 micron; 0.9 mW; 1.8 V; 22 dB; 500 muA; CMOS LNA; CMOS low noise amplifier; NMOS common-gate; PMOS common-source input stage; low-band UWB application; low-band ultra wideband applications; low-power wideband LNA; wideband amplifier; wideband impedance matching; Broadband amplifiers; Character generation; FCC; Frequency; Impedance matching; Low-noise amplifiers; MOS devices; MOSFETs; Resistors; Ultra wideband technology;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9162-4
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251736
