DocumentCode :
2737438
Title :
High-performance HIT solar cells for thinner silicon wafers
Author :
Fujishima, Daisuke ; Inoue, Hirotada ; Tsunomura, Yasufumi ; Asaumi, Toshio ; Taira, Shigeharu ; Kinoshita, Toshihiro ; Taguchi, Mikio ; Sakata, Hitoshi ; Maruyama, Eiji
Author_Institution :
Adv. Energy Res. Center, SANYO Electr. Co., Ltd., Kobe, Japan
fYear :
2010
fDate :
20-25 June 2010
Abstract :
We have been researching and developing HIT (Heterojunction with Intrinsic Thin-layer) solar cells to obtain high conversion efficiency. Last year, we updated the world´s highest conversion efficiency, which was previously 22.3%, to 23.0% with a practical-sized HIT solar cell at the R&D stage. We have also been investigating the performance of thinner HIT solar cells using less than 100-μm-thick crystalline Si (c-Si) wafers in order to effectively reduce the production cost. By using improved technologies, we succeeded in gaining the high conversion efficiency of 22.8% in a HIT solar cell with a 98-μm-thick c-Si wafer and an excellent Voc of 743 mV at the R&D stage. The accomplishment of the 22.8% cell demonstrates that HIT solar cells are advantageous to the use of thinner Si wafers because of certain HIT solar cell features.
Keywords :
solar cells; efficiency 22.8 percent; heterojunction with intrinsic thin-layer solar cells; high-performance HIT solar cells; size 98 mum; thinner silicon wafers; voltage 743 mV; Charge carrier density; Optical device fabrication; Optical reflection; Optical refraction; Photovoltaic cells; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5614460
Filename :
5614460
Link To Document :
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