DocumentCode
2737507
Title
IDDQ characterization in submicron CMOS
Author
Ferre, Antoni ; Figueras, Joan
Author_Institution
Dept. d´´Enginyeria Electron., Univ. Politecnica de Catalunya, Barcelona, Spain
fYear
1997
fDate
1-6 Nov 1997
Firstpage
136
Lastpage
145
Abstract
The effectiveness of IDDQ testing requires appropriate discriminability of defective and non-defective quiescent currents. Consequently, the interest in characterizing these currents is growing. In this paper we focus our attention on the non-defective IDDQ current characterization. The dependence of IDDQ on the channel length spread in scaled down devices is examined. The IDDQ distribution of a subthreshold current dominant technology is obtained. Finally, IDDQ test limits depending on acceptable yield loss and standard deviation of the channel length are determined
Keywords
CMOS integrated circuits; electric current measurement; fault diagnosis; integrated circuit modelling; integrated circuit yield; leakage currents; statistical analysis; IDDQ current measurement; IDDQ distribution; IDDQ testing; channel length; channel length spread; discriminability; drain leakage currents; nondefective quiescent currents; scaled down devices; standard deviation; submicron CMOS; subthreshold current dominant technology; yield loss; CMOS technology; Circuit testing; Current distribution; Current measurement; Integrated circuit testing; Loss measurement; MOSFETs; Manufacturing; Particle measurements; Subthreshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Conference, 1997. Proceedings., International
Conference_Location
Washington, DC
ISSN
1089-3539
Print_ISBN
0-7803-4209-7
Type
conf
DOI
10.1109/TEST.1997.639606
Filename
639606
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