Title :
IDDQ characterization in submicron CMOS
Author :
Ferre, Antoni ; Figueras, Joan
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Politecnica de Catalunya, Barcelona, Spain
Abstract :
The effectiveness of IDDQ testing requires appropriate discriminability of defective and non-defective quiescent currents. Consequently, the interest in characterizing these currents is growing. In this paper we focus our attention on the non-defective IDDQ current characterization. The dependence of IDDQ on the channel length spread in scaled down devices is examined. The IDDQ distribution of a subthreshold current dominant technology is obtained. Finally, IDDQ test limits depending on acceptable yield loss and standard deviation of the channel length are determined
Keywords :
CMOS integrated circuits; electric current measurement; fault diagnosis; integrated circuit modelling; integrated circuit yield; leakage currents; statistical analysis; IDDQ current measurement; IDDQ distribution; IDDQ testing; channel length; channel length spread; discriminability; drain leakage currents; nondefective quiescent currents; scaled down devices; standard deviation; submicron CMOS; subthreshold current dominant technology; yield loss; CMOS technology; Circuit testing; Current distribution; Current measurement; Integrated circuit testing; Loss measurement; MOSFETs; Manufacturing; Particle measurements; Subthreshold current;
Conference_Titel :
Test Conference, 1997. Proceedings., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-4209-7
DOI :
10.1109/TEST.1997.639606
