Title :
Analysis of a complete 600 V-PT-IGBT structure using numerical device-simulation
Author :
Rudolf, R. ; Netzel, M. ; Shammas, N.Y.A.
Author_Institution :
Staffordshire Univ., Stafford, UK
Abstract :
In this paper the method of simulation allowing the complete design of a cell structure as well as a proper edge termination structure of a 600 V-PT-IGBT is described. Because of the use of different device simulators a brief comparison between the simulated results is made. With a proper range of simulation steps the cell structure of an IGBT is optimised for low on-stateand switching losses. The edge termination structure was found by using field plate structures and OFP-FLR-structures
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; 600 V-PT-IGBT; OFP-FLR-structure; cell structure; design; edge termination structure; field plate structure; numerical device simulation; on-state losses; switching losses;
Conference_Titel :
Physical Modelling of Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950434
