Phototransistors Utilizing Individual WS2 Nanotubes

Author

Yang, Yang ; Unalan, Husnu Emrah ; Hiralal, Pritesh ; Chremmou, Konstatina ; The, Andrew ; Alexandrou, Ioannis ; Tenne, Reshef ; Amaratunga, Gehan A J

Author_Institution

Dept. of Eng., Cambridge Univ., Cambridge

fYear

2008

fDate

18-21 Aug. 2008

Firstpage

85

Lastpage

87

Abstract

We report on the photoresponse characteristics of tungsten disulfide (WS₂) nanotubes. Field effect transistors (FETs) were fabricated by using individual WS₂ multiwall nanotubes. Photo-sensitivity to visible light is clearly observed, with enhancement of the channel conductivity, carrier mobility and carrier concentration upon illumination in the visible regime. Polarization-sensitive measurements reveal a strong anisotropy of the photocurrent on the polarization angle of the incident light with respect to the WS₂ nanotube axis. This nano-scale transistor capable of detecting visible light would have a wide range of applications in medical and consumer electronics.

Keywords

carrier density; carrier mobility; field effect transistors; nanoelectronics; nanotube devices; photoconductivity; photodetectors; phototransistors; tungsten compounds; WS₂; carrier concentration; carrier mobility; channel conductivity; consumer electronic applications; field effect transistors; medical applications; multiwall nanotubes; nanoscale transistor; photocurrent; photoresponse; photosensitivity; phototransistors; polarization incident light angle; polarization-sensitive data; tungsten disulfide nanotubes; visible light; Anisotropic magnetoresistance; Conductivity; FETs; Lighting; Nanotubes; Optical polarization; Photoconductivity; Phototransistors; Transistors; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Conference_Location

Arlington, Texas

Print_ISBN

978-1-4244-2103-9

Electronic_ISBN

978-1-4244-2104-6

Type

conf

DOI

10.1109/NANO.2008.32

Filename

4617014