DocumentCode :
2737675
Title :
Photomixing at 1.55 μm in ion-irradiated In0.53Ga0.47As on InP
Author :
Mangeney, J. ; Chimot, N. ; Crozat, P. ; Blary, K. ; Lampin, J.F. ; Mouret, G. ; Bigourd, D. ; Fertein, E.
Author_Institution :
Univ. Paris XI, Orsay
fYear :
2006
fDate :
18-22 Sept. 2006
Firstpage :
208
Lastpage :
208
Abstract :
We report the first demonstration of a terahertz photomixer made of ion-irradiated In0.53Ga0.47As lattice-matched to InP and fiber-optic coupled with the 1.55 μm wavelength drive lasers. The detected signal is at the most 15 dB lower than the one obtained from similar photomixers fabricated from low-temperature-grown GaAs.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoconducting devices; wide band gap semiconductors; In0.53Ga0.47As-InP; fiber-optic; ion-irradiated photoconductors; photomixing; terahertz generation; terahertz photomixer; wavelength 1.55 micron; wavelength drive lasers; Bolometers; Frequency measurement; Gallium arsenide; Indium phosphide; Laser excitation; Optical receivers; Optical sensors; Photoconductivity; Power lasers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0399-5
Electronic_ISBN :
1-4244-0400-2
Type :
conf
DOI :
10.1109/ICIMW.2006.368416
Filename :
4222150
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2737675
بازگشت