Title :
Design of a highly parallel AI processor using new multiple-valued MOS devices
Author :
Hanyu, Takahiro ; Higuchi, Tatsuo
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
A design for a highly parallel processor for real-time reasoning in artificial intelligence (AI) is presented. Knowledge is represented by an associative network based on multiple-valued logic, so that a universal representation can be achieved by varying the parameters between nodes. High-speed reasoning can be attributed to the parallel graph-search technique on this associative network. For its direct implementation, special MOS devices with threshold voltages that are controllable by the external input signals are used. For the four-valued associative network, it is demonstrated that the number of memory cells, cell interconnections, and transistors can be greatly reduced in comparison with the corresponding binary implementation.<>
Keywords :
artificial intelligence; field effect integrated circuits; many-valued logics; parallel processing; artificial intelligence; cell interconnections; highly parallel AI processor; memory cells; multiple-valued MOS devices; multiple-valued logic; parallel graph-search technique; real-time reasoning; Artificial intelligence; Data structures; Design engineering; Hardware; Knowledge based systems; Knowledge representation; Logic devices; MOS devices; Threshold voltage; Voltage control;
Conference_Titel :
Multiple-Valued Logic, 1988., Proceedings of the Eighteenth International Symposium on
Conference_Location :
Palma de Mallorca, Spain
Print_ISBN :
0-8186-0859-5
DOI :
10.1109/ISMVL.1988.5187