Title :
Electrical and optical anisotropy of layered In/sub 2/Se/sub 3/ epitaxial films
Author :
Ohtsuka, Tomohiko ; Okamoto, Tamotsu ; Yamada, Akira ; Konagai, Makoto
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan
Abstract :
In2Se3 epitaxial films with layered structure were successfully grown on (001)GaAs substrates by molecular beam epitaxy (MBE). The layered In2Se3 films whose c-axis was oriented in only one direction were obtained by using slightly misoriented (001)GaAs. Furthermore, electrical and optical anisotropy were observed in the layered In2Se3 films. Conductivity of the layered In2Se3 epitaxial films in a-axis was found to be much larger than that in c-axis. Besides, the absorption coefficient of the layered In2Se3 films for the light polarized toward c-axis was found to be larger than that toward a-axis
Keywords :
III-VI semiconductors; absorption coefficients; electrical conductivity; indium compounds; light polarisation; semiconductor epitaxial layers; GaAs; In/sub 2/Se/sub 3/; MBE layers; absorption coefficient; conductivity; electrical anisotropy; layered epitaxial films; light polarization; molecular beam epitaxial layers; optical anisotropy; Anisotropic conductive films; Anisotropic magnetoresistance; Conductivity; Geometrical optics; Molecular beam epitaxial growth; Optical films; Semiconductor films; Substrates; Surface morphology; Wavelength measurement;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711610
