Electrical and optical anisotropy of layered In/sub 2/Se/sub 3/ epitaxial films

Author

Ohtsuka, Tomohiko ; Okamoto, Tamotsu ; Yamada, Akira ; Konagai, Makoto

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan

fYear

1997

fDate

8-11 Sept. 1997

Firstpage

183

Lastpage

186

Abstract

In₂Se₃ epitaxial films with layered structure were successfully grown on (001)GaAs substrates by molecular beam epitaxy (MBE). The layered In₂Se₃ films whose c-axis was oriented in only one direction were obtained by using slightly misoriented (001)GaAs. Furthermore, electrical and optical anisotropy were observed in the layered In₂Se₃ films. Conductivity of the layered In₂Se₃ epitaxial films in a-axis was found to be much larger than that in c-axis. Besides, the absorption coefficient of the layered In₂Se₃ films for the light polarized toward c-axis was found to be larger than that toward a-axis

Keywords

III-VI semiconductors; absorption coefficients; electrical conductivity; indium compounds; light polarisation; semiconductor epitaxial layers; GaAs; In/sub 2/Se/sub 3/; MBE layers; absorption coefficient; conductivity; electrical anisotropy; layered epitaxial films; light polarization; molecular beam epitaxial layers; optical anisotropy; Anisotropic conductive films; Anisotropic magnetoresistance; Conductivity; Geometrical optics; Molecular beam epitaxial growth; Optical films; Semiconductor films; Substrates; Surface morphology; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711610

Filename

711610