Title :
Metallated Porphyrin Self Assembled Monolayers as Cu Diffusion Barriers for the Nano-Scale CMOS Technologies
Author :
Khaderbad, Mrunal A. ; Nayak, Kaushik ; Yedukondalu, M. ; Ravikanth, M. ; Mukherji, S. ; Rao, Ramgopal V.
Author_Institution :
Centre for Nanoelectron., IIT Bombay, Mumbai
Abstract :
In this paper we have studied the application of metallated porphyrin self assembled monolayers (SAMs) as Cu diffusion barriers for ultra-large scale integration (ULSI) CMOS applications. The results for Cu/SiO2/Si and Cu/SAM/SiO2/Si MOS CAP structures are compared through a detailed electrical characterization of threshold voltage shift using bias-temperature studies. Material characterization and surface morphology is studied using UV absorption spectra and AFM. Our results show that metallated porphyrin SAMs can be effectively used as Cu diffusion barriers for ULSI applications.
Keywords :
MOS capacitors; ULSI; atomic force microscopy; copper; diffusion barriers; integrated circuit interconnections; monolayers; nanotechnology; organic compounds; self-assembly; silicon; silicon compounds; surface morphology; ultraviolet spectra; AFM; CMOS applications; Cu-SiO2-Si; Cu-SiO2-Si-Jk; UV absorption spectra; bias-temperature; diffusion barriers; electrical characterization; metallated porphyrin; self assembled monolayers; surface morphology; threshold voltage shift; ultra large scale integration; Atomic layer deposition; CMOS technology; Chemical vapor deposition; Copper; Electromagnetic wave absorption; Metallization; Self-assembly; Surface morphology; Temperature; Ultra large scale integration;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.56
