Mass Production of Room Temperature Single Electron Transistors using Step & Flash Imprint Lithography and Lift-Off Technique

We report the use of step & flash imprint lithography reverse tone (SFIL-R^TM) and liftoff technique to fabricate sub-100 nm metal nano-wires as the electrodes for room temperature single electron transistors (RT-SET). The optimized process flow was performed on approximately 300 imprints, for a total of 714,000 devices. Each imprinted device contains drain/source/gate electrodes. Multiple electrode geometries were designed to explore the impact of device parameters. Following electrode formation, Tungsten quantum dots (QD) were formed using a novel focus ion beam (FIB) deposition technique, resulting in room temperature single electron transistor (RT-SET) devices. The RT-SET devices are tested using a Keithley 4200-SCS semiconductor parametric analyzer.