Title :
Contactiess Measurement of Conductivity of GaAs Wafers by Millimeter Waves
Author_Institution :
Tohoku Univ., Sendai
Abstract :
A method to measure electrical conductivity of GaAs wafers by millimeter waves is presented. A compact equipment working at 94 GHz was used to measure the millimeter wave signal reflected from the wafer surface. A contactless measurement is realized and the measurement result is independent of the thickness of the wafer.
Keywords :
III-V semiconductors; electrical conductivity measurement; gallium arsenide; millimetre wave measurement; semiconductor device measurement; GaAs; contactless measurement; electrical conductivity; frequency 94 GHz; millimeter waves; wafer conductivity measurement; wafer surface; Conducting materials; Conductivity measurement; Contacts; Electric variables measurement; Gallium arsenide; Millimeter wave measurements; Millimeter wave technology; Physics; Thickness measurement; Voltage;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368439
