Title :
Znic Oxide Nanowires with Ultra-Thin and Low-Resistance Seed Layer
Author :
Su, Wen-Yan ; Lin, Ching-Fuh
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
Abstract :
We report the zinc oxide (ZnO) nanowires with ultra-thin seed layer by low-cost hydrothermal method. The ultra-thin seed layer consists of ZnO thin film, which is fabricated by sol-gel method and then etched to reduce the thickness by diluted HCI. The resistance along the vertical direction of the ultra-thin seed layer on the indium tin oxide (ITO) glass decreases during the etching process. ZnO nanowires with low resistance in the vertical direction are expected to enable the application of optoelectronic device with better performance.
Keywords :
II-VI semiconductors; electrical resistivity; etching; nanowires; semiconductor growth; semiconductor quantum wires; sol-gel processing; wide band gap semiconductors; zinc compounds; ITO; ZnO; etching; hydrothermal method; indium tin oxide glass; low-resistance seed layer; optoelectronic device; resistance; sol-gel method; thin film; ultra-thin seed layer; zinc oxide nanowires; Atomic force microscopy; Etching; Glass; Indium tin oxide; Nanowires; Optical arrays; Photonics; Substrates; Transistors; Zinc oxide;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, Texas
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.64
