Title :
Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells
Author :
Jones, E.D. ; Blount, M. ; Chow, W. ; Hou, H. ; Simmons, J.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12×1011 cm-2. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; interface states; magneto-optical effects; photoluminescence; renormalisation; semiconductor quantum wells; 1.4 K; 2D-carrier densities; 34 meV; 8 nm; GaAs-AlGaAs; bandgap energy reduction; bandgap renormalization; magnetoluminescence spectroscopy; many body effects; n-type GaAs/AlGaAs single quantum wells; Extraterrestrial measurements; Fiber lasers; Gallium arsenide; Laser transitions; Magnetic field measurement; Optical fibers; Photonic band gap; Shape; Substrates; Temperature measurement;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711611
