Title :
High Power Diode Pumped Vertical Externalcavity Surface-emitting Lasers (VECSELS)
Author :
Lu, G.G. ; He, C.F. ; Shan, X.N. ; Qin, L. ; Yan, C.L. ; Ning, Y.Q. ; Wang, L.J.
Author_Institution :
Chinese Acad. of Sci., Changchun
Abstract :
We describe the theoretical analysis and calculations of the 980 nm high-power diode-pumped vertical external cavity surface emitting laser (VECSEL). The VECSEL with active region of InGaAs/GaAsP/AlGaAs system can be operated near 500 mW in a single transverse mode.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum wells; surface emitting lasers; InGaAs-GaAsP-AlGaAs; VECSEL; high power diode pumped vertical external-cavity surface-emitting lasers; power 500 mW; single transverse mode; wavelength 980 nm; Indium gallium arsenide; Laser excitation; Optical surface waves; Power generation; Power lasers; Pump lasers; Semiconductor diodes; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368444
