DocumentCode :
2738293
Title :
New GaInNAs/GaAs Quantum Well Structure For Long Wavelength Semiconductor Lasers
Author :
Miyamoto, Takahiro ; Takada, Tatsuo ; Takeuchi, Ken ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Tokyo Institute of Technology
fYear :
1997
fDate :
14-18 July 1997
Firstpage :
251
Lastpage :
252
Keywords :
Diode lasers; Electrons; Gallium arsenide; Lattices; Optical materials; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-3889-8
Type :
conf
DOI :
10.1109/CLEOPR.1997.610928
Filename :
610928
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2738293
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