Title :
Current Rectification by As-Grown Chemical Vapor Deposited Single-Walled Carbon Nanotubes
Author :
Mallick, Govind ; Griep, Mark ; Lastella, Sarah ; Sahoo, Sangeeta ; Hirsch, Samuel ; Ajayan, Pulickel M. ; Karna, Shashi P.
Author_Institution :
US Army Res. Lab., AMSRD-ARL-WM-BD, Aberdeen Proving Ground, MD
Abstract :
Observation of diode-like current (I) - voltage (V) characteristics of switches fabricated from chemical vapor deposited (CVD) as-grown single-walled carbon nanotube (SWNT) bundles are presented. Atomic force microscopic analysis of the device structure and surface topology of SWNT suggest the observed rectification of current to possibly result from (a) cross-tube junctions, (b) a mixture of metallic and semiconducting tubes in the SWNT bundles, and/or (c) chirality change along a single tube. The exact mechanism underlying the observed rectification could not be established. The diode-like behavior of SWNT devices discovered in this research opens up new applications of SWNTs as nanoscale AC-DC converter.
Keywords :
carbon nanotubes; chemical vapour deposition; diodes; nanotube devices; rectification; surface topography; C; as-grown chemical vapor deposition; atomic force microscopic analysis; chirality; cross-tube junctions; current rectification; device structure; diode-like current-voltage property; nanoscale AC-DC converter applications; single-walled carbon nanotube bundles; surface topology; Atomic force microscopy; Atomic layer deposition; Carbon nanotubes; Chemical vapor deposition; Nanoscale devices; Semiconductivity; Semiconductor diodes; Switches; Topology; Voltage;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.77
