Title :
Formation of p-n Junctions in Double-Walled Carbon Nanotubes by a Plasma Ion-Irradiation Method
Author :
Li, Y.F. ; Hatakeyama, R. ; Kaneko, T. ; Tohji, K.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai
Abstract :
We have investigated the transport properties of double-walled carbon nanotubes (DWNTs) encapsulating various molecules or atoms, via a plasma-ion irradiation method. Our measurements indicate that it is possible to make p-n junctions in DWNTs by adjusting the filling levels and types of encapsulated electron dopants.
Keywords :
carbon nanotubes; doping profiles; ion beam effects; p-n junctions; plasma materials processing; semiconductor nanotubes; C; double-walled carbon nanotubes; encapsulated electron dopants; filling levels; p-n junctions; plasma ion-irradiation method; transport properties; Carbon nanotubes; Electrons; Encapsulation; Filling; Mechanical factors; P-n junctions; Plasma measurements; Plasma properties; Plasma transport processes; Substrates;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, Texas
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.79
