DocumentCode
2738408
Title
Formation of p-n Junctions in Double-Walled Carbon Nanotubes by a Plasma Ion-Irradiation Method
Author
Li, Y.F. ; Hatakeyama, R. ; Kaneko, T. ; Tohji, K.
Author_Institution
Dept. of Electron. Eng., Tohoku Univ., Sendai
fYear
2008
fDate
18-21 Aug. 2008
Firstpage
243
Lastpage
246
Abstract
We have investigated the transport properties of double-walled carbon nanotubes (DWNTs) encapsulating various molecules or atoms, via a plasma-ion irradiation method. Our measurements indicate that it is possible to make p-n junctions in DWNTs by adjusting the filling levels and types of encapsulated electron dopants.
Keywords
carbon nanotubes; doping profiles; ion beam effects; p-n junctions; plasma materials processing; semiconductor nanotubes; C; double-walled carbon nanotubes; encapsulated electron dopants; filling levels; p-n junctions; plasma ion-irradiation method; transport properties; Carbon nanotubes; Electrons; Encapsulation; Filling; Mechanical factors; P-n junctions; Plasma measurements; Plasma properties; Plasma transport processes; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location
Arlington, Texas
Print_ISBN
978-1-4244-2103-9
Electronic_ISBN
978-1-4244-2104-6
Type
conf
DOI
10.1109/NANO.2008.79
Filename
4617061
Link To Document