Magnetoluminescence measurement of Zeeman and exchange interactions of excitons in GaAs/AlGaAs multiple quantum wells

Author

Leem, Y.A. ; Ko, H.S. ; Kim, W.S. ; Kim, Y.S. ; Kim, D.H. ; Schmiedel, T. ; Yun, C.E. ; Pyo, H.M. ; Woo, J.C.

Author_Institution

Dept. of Phys., Seoul Nat. Univ., South Korea

fYear

1997

fDate

8-11 Sep 1997

Firstpage

191

Lastpage

194

Abstract

The Zeeman splitting and diamagnetic shift of heavy-hole exciton in GaAs/Al_0.25Ga_0.25As multi-quantum wells (MQW) were investigated for various barrier widths by magnetoluminescence up to 30 T at 4.2 K. It is obtained that the diamagnetic shift is independent to the barrier width (L_B), but the effective g-factor becomes smaller as L_B decreases for a fixed QW width. Also reported is the fine splitting due to the exchange interaction for L_B⩽50 Å

Keywords

III-V semiconductors; Zeeman effect; aluminium compounds; exchange interactions (electron); excitons; gallium arsenide; magneto-optical effects; photoluminescence; semiconductor quantum wells; GaAs-AlGaAs; GaAs/Al_0.25Ga_0.25As; GaAs/AlGaAs multiple quantum wells; Zeeman interactions; diamagnetic shift; effective g-factor; exchange interactions; excitons; fine splitting; magnetoluminescence; magnetoluminescence measurement; Couplings; Elementary particle exchange interactions; Excitons; Gallium arsenide; Laboratories; Magnetic field measurement; Magnetic separation; Physics; Quantum well devices; Telecommunications;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711613

Filename

711613