Title :
Current Collapse Simulation of GaN HEMTs
Author :
Hu, W.D. ; Chen, X.S. ; Quan, Z.J. ; Xia, C.S. ; Lu, W.
Author_Institution :
Chinese Acad. of Sci., Shanghai
Abstract :
Using a two-dimensional simulator, current collapse effect is simulated in GaN HEMTs. Dynamic picture of trapping of hot electron under gate pulse is discussed. The trapped charge may accumulate under punch-off gate voltage at gate edge drain side due to the large electric Held strain. Self-heating effect is a consequence of the current collapse.
Keywords :
III-V semiconductors; electron traps; gallium compounds; high electron mobility transistors; hot carriers; wide band gap semiconductors; 2D simulator; GaN; HEMT; current collapse effect; current collapse simulation; hot electron trapping; self-heating effect; Capacitive sensors; Electron traps; Gallium nitride; HEMTs; Hydrodynamics; Intrusion detection; MODFETs; Region 1; Steady-state; Voltage;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368463
