Lateral confinement and inter-wire coupling of exciton in 4-16 nm wide GaAs/AlGaAs quantum wires observed by magnetoluminescence

Author

Kim, W.S. ; Leem, Y.A. ; Kim, Y.S. ; Ko, H.S. ; Kim, D.H. ; Yun, C.E. ; Pyo, H.M. ; Schmiedel, T. ; Woo, J.C.

Author_Institution

Dept. of Phys., Seoul Nat. Univ., South Korea

fYear

1997

fDate

8-11 Sep 1997

Firstpage

195

Lastpage

198

Abstract

The result on magnetoluminescence study of the exciton in GaAs/Al _0.5Ga_0.5As quantum wire (QWR) superlattice grown on vicinal GaAs substrate are reported. For 30 T, the diamagnetic shift is 7.8 meV for QWR of 4 nm wide, while it is 11 meV for QWR of 8 nm or wider. For 4 nm QWR, the diamagnetic shift remains the same up to 17 T for the magnetic field parallel and angled to the growth direction. But, it saturates in the angles geometry at 17 T where the cyclotron diameter becomes comparable to QWR width. If the lateral confinement model is introduced in the formation of exciton in QWR, the saturation can be interpreted as the breaking of inter-wire coupling

Keywords

III-V semiconductors; aluminium compounds; excitons; gallium arsenide; interface states; magneto-optical effects; photoluminescence; semiconductor quantum wires; 11 meV; 4 nm; 4-16 nm wide GaAs/AlGaAs quantum wires; 7.8 meV; 8 nm; GaAs-AlGaAs; GaAs/Al_0.5Ga_0.5As; cyclotron diameter; diamagnetic shift; exciton; inter-wire coupling; lateral confinement; lateral confinement model; magnetoluminescence; Atomic force microscopy; Couplings; Excitons; Gallium arsenide; Magnetic confinement; Magnetic fields; Magnetic superlattices; Physics; Saturation magnetization; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711614

Filename

711614