DocumentCode
2738722
Title
Nanopillar lasers on silicon
Author
Chang-Hasnain, Connie ; Chen, Roger ; Tran, Thai-Truong D. ; Ng, Kar Wei ; Ko, Wai Son
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
fYear
2011
fDate
10-12 Jan. 2011
Firstpage
27
Lastpage
28
Abstract
Subwavelegnth-sized nanolasers are achieved with InGaAs nanopillars monolithically grown on silicon using low-temperature MOCVD. The resonators support helically-propagating cavity modes providing strong feedback despite a very low index contrast with the silicon substrate.
Keywords
MOCVD; integrated optics; laser cavity resonators; laser feedback; light propagation; nanophotonics; semiconductor lasers; InGaAs; Si; helically-propagating cavity modes; laser feedback; laser resonators; low index contrast; low-temperature MOCVD; monolithically grown nanolasers; subwavelegnth-sized nanopillar lasers; Cavity resonators; Laser modes; Laser tuning; Pump lasers; Silicon; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Winter Topicals (WTM), 2011 IEEE
Conference_Location
Keystone, CO
Print_ISBN
978-1-4244-8428-7
Type
conf
DOI
10.1109/PHOTWTM.2011.5730029
Filename
5730029
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