DocumentCode
2738723
Title
A Fundamental Analysis of Nano-Crossbars with Non-Linear Switching Materials and its Impact on TiO2 as a Resistive Layer
Author
Flocke, A. ; Noll, T.G. ; Kügeler, C. ; Nauenheim, C. ; Waser, R.
Author_Institution
Dept. of Electr. Eng. & Comput. Syst., RWTH Aachen Univ., Aachen
fYear
2008
fDate
18-21 Aug. 2008
Firstpage
319
Lastpage
322
Abstract
While materials with a linear IV-characteristic yield in a practically unusable voltage swing when used in crossbar arrays, materials with a nonlinear IV-curve were expected to yield better results. With a fundamental analytical approach, we can show that the gain is theoretically limited to the square root of the number of word lines used in the crossbar. Furthermore the degree of nonlinearity must not exceed a certain value, otherwise the voltage swing decreases. TiO2 with its nonlinear IV-characteristic outperforms any possible material with a linear IV-characteristic but the voltage swing for large crossbars is still below 10%VDD and would demand for high costly sense amplifiers.
Keywords
electrical resistivity; nanoelectronics; semiconductor switches; titanium compounds; TiO2; crossbar arrays; nanocrossbars; nonlinear switching materials; resistive layer; sense amplifiers; titanium dioxide; voltage swing; Degradation; Differential amplifiers; Diodes; Electrodes; Hysteresis; Nonvolatile memory; Solid state circuits; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location
Arlington, TX
Print_ISBN
978-1-4244-2103-9
Electronic_ISBN
978-1-4244-2104-6
Type
conf
DOI
10.1109/NANO.2008.101
Filename
4617083
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