Title :
GaN nanorods for improved light emitting diode performance
Author :
Yeh, Ting-Wei ; Stewart, Lawrence ; Chu, Hyung-Joon ; Dapkus, P.Daniel
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
Abstract :
GaN nanorod arrays are grown by selective area growth. The exposed nonpolar planes of the nanostructures can be utilized as a potential solution to improve the efficiency of light emitting diodes.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; nanofabrication; nanorods; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; GaN; InGaN-GaN; metalorganic vapor phase deposition; nanorod arrays; nonpolar planes; selective area growth; Electron beams; Gallium nitride; MOCVD; Materials; Nanowires; Quantum well devices; Stacking;
Conference_Titel :
Winter Topicals (WTM), 2011 IEEE
Conference_Location :
Keystone, CO
Print_ISBN :
978-1-4244-8428-7
DOI :
10.1109/PHOTWTM.2011.5730030
