DocumentCode :
2738741
Title :
Experimental and Molecular Dynamics Investigations of Nanoindentation-induced Phase Transformations in Monocrystalline Silicon
Author :
Lin, Yen-Hung ; Yang, Ping-Feng ; Jian, Sheng-Rui ; Lai, Yi-Shao ; Chen, Tei-Chen
Author_Institution :
Dept. of Mech. Eng., Nat. Cheng Kung Univ., Tainan
fYear :
2008
fDate :
22-24 Oct. 2008
Firstpage :
44
Lastpage :
48
Abstract :
This work presents experimental and molecular dynamics approaches towards deformation and phase transformation mechanisms of monocrystalline Si(100) subjected to nanoindentation. The nanoindentation experiment was conducted with a Berkovich indenter. Following the analysis using cross-sectional transmission electron microscopy with the samples prepared by focused ion beam milling, upon pressure release, metastable Si-III and Si-XII phases were identified inside the indentation-induced deformed region beneath the indent. We also demonstrated phase distributions during loading and unloading stages of spherical and Berkovich nanoindentations through molecular dynamics simulations. By searching the presence of the fifth neighboring atom within a non-bonding length, Si-III and Si-XII have been successfully distinguished from Si-I. Crystallinity of this mixed-phase was further identified by radial distribution functions.
Keywords :
deformation; elemental semiconductors; focused ion beam technology; materials preparation; milling; molecular dynamics method; nanoindentation; silicon; solid-state phase transformations; transmission electron microscopy; Berkovich nanoindentation; Si; Si(100); cross-sectional transmission electron microscopy; deformation; focused ion beam milling; indentation-induced deformed region; material preparation; mechanical properties; mixed-phase; molecular dynamics simulation; monocrystalline silicon; nanoindentation-induced phase transformation mechanism; nonbonding length; radial distribution functions; Amorphous materials; Contacts; Crystalline materials; Crystallization; Electrodes; Geometry; Phase change materials; Phase change memory; Silicon; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly & Circuits Technology Conference, 2008. IMPACT 2008. 3rd International
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3623-1
Electronic_ISBN :
978-1-4244-3624-8
Type :
conf
DOI :
10.1109/IMPACT.2008.4783804
Filename :
4783804
Link To Document :
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