DocumentCode
2738746
Title
Reduced Carrier Lifetime At High Temperature In 1.3-/spl mu/m n-type Modulationdoped Strained Multi-quantum Well Lasers
Author
Nakahara, K. ; Uomi, K. ; Haga, T. ; Taniwatari, T. ; Toyonaka, T.
Author_Institution
Hitachi, Ltd., 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo 185, Japan
fYear
1997
fDate
14-18 July 1997
Firstpage
270
Lastpage
271
Keywords
Charge carrier lifetime; Delay effects; Epitaxial growth; Epitaxial layers; Laser beam cutting; Laser theory; Quantum well devices; Quantum well lasers; Semiconductor laser arrays; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-3889-8
Type
conf
DOI
10.1109/CLEOPR.1997.610959
Filename
610959
Link To Document