DocumentCode :
2738746
Title :
Reduced Carrier Lifetime At High Temperature In 1.3-/spl mu/m n-type Modulationdoped Strained Multi-quantum Well Lasers
Author :
Nakahara, K. ; Uomi, K. ; Haga, T. ; Taniwatari, T. ; Toyonaka, T.
Author_Institution :
Hitachi, Ltd., 1-280, Higashi-koigakubo, Kokubunji-shi, Tokyo 185, Japan
fYear :
1997
fDate :
14-18 July 1997
Firstpage :
270
Lastpage :
271
Keywords :
Charge carrier lifetime; Delay effects; Epitaxial growth; Epitaxial layers; Laser beam cutting; Laser theory; Quantum well devices; Quantum well lasers; Semiconductor laser arrays; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-3889-8
Type :
conf
DOI :
10.1109/CLEOPR.1997.610959
Filename :
610959
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2738746
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