Title :
Toward uniform and high optical quality site-controlled quantum dots
Author :
Cheng, K.Y. ; Cheng, Chien-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
In this paper, the effects of process parameters, including nanopore formation, nanopore size, and surface cleaning conditions after nanopore formation on the characteristics of InAs SCQDs grown on GaAs are examined. The influence of MBE growth parameters on SCQD formation and approaches toward optimization of structural and optical properties will also be discussed.
Keywords :
III-V semiconductors; indium compounds; nanofabrication; nanoporous materials; semiconductor growth; semiconductor quantum dots; surface cleaning; GaAs; InAs; MBE growth; nanopore formation; nanopore size; optical properties; structural properties; surface cleaning conditions; uniform high optical quality site-controlled quantum dots; Etching; Gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers; Substrates; Surface cleaning;
Conference_Titel :
Winter Topicals (WTM), 2011 IEEE
Conference_Location :
Keystone, CO
Print_ISBN :
978-1-4244-8428-7
DOI :
10.1109/PHOTWTM.2011.5730031
