• DocumentCode
    2738768
  • Title

    Selective area epitaxy of ultra-high density InGaN based quantum dots

  • Author

    Liu, Guangyu ; Zhao, Hongping ; Zhang, Jing ; Park, Joo-Hyung ; Mawst, Luke J. ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2011
  • fDate
    10-12 Jan. 2011
  • Firstpage
    35
  • Lastpage
    36
  • Abstract
    Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock copolymer nanopatterns. This approach resulted in ultra-high InGaN QD density of 8 × 1010 cm-2.
  • Keywords
    III-V semiconductors; MOCVD; gallium compounds; indium compounds; nanopatterning; nanophotonics; optical films; polymer blends; self-assembly; semiconductor epitaxial layers; semiconductor quantum dots; wide band gap semiconductors; InGaN; metal-organic chemical vapor deposition; selective area epitaxy; self-assembled diblock copolymer nanopatterns; ultrahigh density quantum dots; Chemical vapor deposition; Epitaxial growth; Gallium nitride; Quantum dots; Scanning electron microscopy; Self-assembly;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Winter Topicals (WTM), 2011 IEEE
  • Conference_Location
    Keystone, CO
  • Print_ISBN
    978-1-4244-8428-7
  • Type

    conf

  • DOI
    10.1109/PHOTWTM.2011.5730033
  • Filename
    5730033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2738768