Title :
Selective growth of site-controlled Quantum Dots
Author :
Gogneau, N. ; Fain, B. ; Gratiet, L. Le ; Patriarche, G. ; Largeau, L. ; Beaudoin, G. ; Ulysse, C. ; Elvira, D. ; Braive, R. ; Beveratos, A. ; Robert-Philip, I. ; Sagnes, I.
Author_Institution :
Lab. de Photonique et de Nanostruct., UPR20, Marcoussis, France
Abstract :
Nanoselective growth of site-controlled quantum dot is reported. InAs(P)/InP QDs are grown by MOVPE on patterned substrate. Partial patterning of the substrate using a specific design taking into account the diffusion length of the active species from 0.5 μm to 200μm according to the growth conditions is done.
Keywords :
III-V semiconductors; MOCVD; arsenic compounds; indium compounds; integrated optics; nanopatterning; nanophotonics; optical design techniques; semiconductor growth; semiconductor quantum dots; surface diffusion; vapour phase epitaxial growth; InAs(P)-InP; MOVPE; diffusion length; nanopatterning; nanoselective quantum dot growth; optical design; size 0.5 mum to 200 mum; Dielectrics; Epitaxial growth; Epitaxial layers; Indium phosphide; Photonics; Scanning electron microscopy; Transmission electron microscopy;
Conference_Titel :
Winter Topicals (WTM), 2011 IEEE
Conference_Location :
Keystone, CO
Print_ISBN :
978-1-4244-8428-7
DOI :
10.1109/PHOTWTM.2011.5730034
