On the Impact Ionization of Double-Gate MOSFET Using Full Band Monte Carlo Method

We predict the impact ionization in a 13 nm gate length double-gate MOSFET structures using full-band self- consistent ensemble Monte Carlo method with quantum correction. The effects of various design parameters such as gate oxide thickness, body thickness and channel length on the impact ionization onset voltages are investigated. The studies show that the reduction of channel length reduction remains as the major contributor to the impact ionization phenomena. On analyzing the distribution of impact ionization events in the structure, impact ionization induced hot carrier activity is shown to be largely confined to the channel-drain interface region. This allows for possible gate oxide hot carriers reliability issues to be greatly reduced through an optimal design.