Extremely sharp Er-related luminescence in Er-doped GaP grown by OMVPE with TBP

Author

Fujiwara, Y. ; Ito, T. ; Ofuchi, H. ; Tsuchiya, J. ; Tanigawa, A. ; Tabuchi, M. ; Takeda, Y.

Author_Institution

Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan

fYear

1997

fDate

8-11 Sep 1997

Firstpage

199

Lastpage

202

Abstract

We have successfully observed radiant Er-related low-temperature photoluminescence (PL) dominated by numerous extremely sharp emission lines due to the intra-4f shell transitions of Er³⁺ ions in Er-doped GaP (GaP:Er) grown by OMVPE with TBP. The intensity of the emission lines depended strongly on the growth temperature, the Er concentration and the reactor pressure, indicating coexistence of various Er-related luminescence centers in the samples. The fluorescence-detected EXAFS analysis on the samples revealed clearly that the majority of Er atoms doped are substitutionally incorporated into Ga sites in the GaP lattice. Effects of In-addition to GaP:Er have also been investigated

Keywords

EXAFS; III-V semiconductors; erbium; gallium compounds; photoluminescence; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; Er concentration; GaP:Er; OMVPE; extremely sharp Er-related luminescence; fluorescence-detected EXAFS analysis; growth temperature; intra-4f shell transitions; photoluminescence; reactor pressure; Erbium; Fluorescence; Indium tin oxide; Inductors; Lattices; Luminescence; Materials science and technology; Photoluminescence; Temperature dependence; Thermal quenching;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711615

Filename

711615