Title :
OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices
Author :
Luisier, Mathieu ; Klimeck, Gerhard
Author_Institution :
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN
Abstract :
The technology computer aided design of nanometer-scaled semiconductor devices requires appropriate quantum-mechanical models that capture the atomic granularity of the simulation domain. The recently developed nanodevice simulator OMEN fulfills this condition. It is able to treat two- and three-dimensional transistor structures in a full-band framework using the semi-empirical sp3d5 s* tight-binding model. In this formalism each atom of the device is represented by a set of ten orbitals leading to multi-band and open-boundary Schrodinger equations that have to be solved thousands of times. To improve its computational efficiency OMEN has four levels of parallelism that make it run on the largest available supercomputers.
Keywords :
CMOS integrated circuits; Schrodinger equation; semiconductor device models; technology CAD (electronics); tight-binding calculations; 2D transistor structures; 3D transistor structures; OMEN; Schrodinger equations; atomistic quantum transport; full-band quantum transport; nanodevice simulator; nanometer-scaled semiconductor devices; post-CMOS nanodevices; supercomputers; technology computer aided design; tight-binding model; Appropriate technology; Computational efficiency; Computational modeling; Computer simulation; Nanoscale devices; Parallel processing; Quantum computing; Schrodinger equation; Semiconductor devices; Supercomputers;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.110
