Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space

Author

El-Banna, Mohammed M. ; Sabry, Yasser M. ; Fikry, W. ; Abdolkader, Tarek M. ; Omar, O.A.

Author_Institution

Dept. of Engineering, Phy. and Math., Faculty of Eng., Ain, Shams Uni., Cairo, Egypt

fYear

2012

fDate

10-11 Oct. 2012

Firstpage

1

Lastpage

5

Abstract

Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green´s function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term´s targets of the ITRS for DG MOSFETs. The CMS presents the advantage of simulation time reduction without significant loss of accuracy, when sufficient number of modes is used. The computational burden is reduced by a factor of 7 comparing with RS and the percentage error in the terminal current is less than 0.2 % for the year 2017 target device of the ITRS.

Keywords

Green´s function methods; MOSFET; coupled circuits; CMS; DG MOSFET; ITRS; NEGF; coupled-mode space; double gate MOSFET; nonequilibrium Green´s function formalism; quantum transport simulation; real space; Accuracy; Computational efficiency; Computational modeling; Equations; Logic gates; MOSFETs; Mathematical model; Non-Equilibrium Green´s Function Formalism; coupled-mode space; double-gate MOSFETs; quantum transport; real space;

fLanguage

English

Publisher

ieee

Conference_Titel

Engineering and Technology (ICET), 2012 International Conference on

Conference_Location

Cairo

Print_ISBN

978-1-4673-4808-9

Type

conf

DOI

10.1109/ICEngTechnol.2012.6396138

Filename

6396138