High-Field Hole Transport in Small Diameter Silicon Nanowires

High-field hole transport in small diameter silicon nanowires (SiNWs) is explored using ensemble Monte Carlo (EMC) simulations. The basis for the simulations is band structure calculations utilizing sp³d⁵s* tight-binding (TB) scheme, and bulk acoustic and optical phonons. Hole-phonon scattering rates are evaluated using Fermi´s Golden Rule and deformation potential approximations. Both steady-state and transient response of these dimensionally reduced materials are explored. Our results demonstrate the importance of optical phonon and intersubband scattering on influencing hole transport at relatively high electric fields, and help place an upper bound on the expected electronic response of these materials.