Title :
Multiscale Atomistic Simulations of High-k MOSFETs
Author :
Carlo, Aldo ; Maur, M. ; Sacconi, F. ; Pecchia, A. ; Povolotskyi, M. ; Penazzi, G. ; Romano, G.
Author_Institution :
TiberCAD - Dept. of Electron. Eng., Univ. of Rome "Tor Vergata" Rome, Rome
Abstract :
We report on a multiscale simulation approach that includes both macroscopic drift-diffusion current model and atomistic quantum tunneling model. The models are solved together in a self-consistent way inside a single simulation package. We compare the high-K gates based on HfO2 and ZrO2 with a SiO2 gate of the same equivalent thickness and show the effect of the tunneling current on transistor performance.
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; silicon compounds; tunnelling; zirconium compounds; HfO2; SiO2; ZrO2; atomistic quantum tunneling model; high-k MOSFETs; macroscopic drift-diffusion current model; multiscale atomistic simulations; tunneling current; Computational modeling; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Photonic band gap; Poisson equations; Quantum mechanics; Tunneling;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.116
