DocumentCode :
273912
Title :
Computer aided design of a microwave MESFET DRO
Author :
Choo, E.B.L. ; Seawright, S.W.J. ; Fusco, V.F. ; Stewart, J.A.C. ; Tang, A.
Author_Institution :
Queen´´s Univ., Belfast, UK
fYear :
1989
fDate :
5-8 Sep 1989
Firstpage :
561
Lastpage :
565
Abstract :
Describes the extension of an oscillator synthesis procedure, to incorporate a coupled dielectric resonator (DR) and hence enable the synthesis of a MESFET DRO (dielectric resonator stabilised oscillator). The synthesis strategy employed for MESFET oscillator design is described. This technique uses the large-signal device circuit model to predict the external terminations necessary for maximum output power at a specified frequency. The next section describes the DR mounting configuration, the resulting equivalent circuit and the method by which it is incorporated into the synthesis procedure. Finally the method is used to design a 13.8 GHz DRO, using a NE71000 chip MESFET
Keywords :
Schottky gate field effect transistors; circuit CAD; dielectric resonators; microwave oscillators; solid-state microwave circuits; 13.8 GHz; DR mounting configuration; NE71000 chip MESFET; coupled dielectric resonator; dielectric resonator stabilised oscillator; equivalent circuit; external terminations; large-signal device circuit model; maximum output power; microwave MESFET DRO; synthesis procedure;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Circuit Theory and Design, 1989., European Conference on
Conference_Location :
Brighton
Type :
conf
Filename :
51682
Link To Document :
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