DocumentCode
2739213
Title
An Ab Initio Investigation of Energy Bandgap of Monolayer and Bilayer Graphene Nanoribbon Based on Different Basis Sets
Author
Lam, Kai-Tak ; Liang, Gengchiau
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fYear
2008
fDate
18-21 Aug. 2008
Firstpage
409
Lastpage
411
Abstract
We investigated the electronic structure of monolayer and bilayer graphene nanoribbon with armchair edges (AGNRM and AGNRB respectively) based on density functional theory using single-zeta (SZ) and double -zeta (polarized) (DZP) basis sets. We first optimize the atomic structure of an AGNRB and found that DZP is better suited to account for the interlayer interaction. Next we calculate the energy band diagram of the AGNRM and AGNRB of different width, and study dependence of the band gap (Eg) on the widths. Like AGNRM, AGNRB also shows three different groups in terms of energy bandgap vs. width. In general, AGNRB is found to have a lower Eg than AGNRM. Especially for N=3p+2 family, while it is semiconducting for AGNRM, the Eg of AGNRB is very small and can be considered as metallic at room temperature. Furthermore, we investigate the relationship between Eg and the interlayer distance (D) of AGNRB. From our calculation, Eg is found to be strongly influenced by D and Eg increases as D increases. Finally, comparing solely on Eg, we can see that both SZ and DZP calculations provide information on the three trends of the AGNRM and AGNRB, with small differences in the absolute values and hence it may be possible to use SZ for rapid preliminary investigation of the electronic properties of AGNR systems.
Keywords
ab initio calculations; carbon; density functional theory; electronic structure; energy gap; monolayers; nanostructured materials; C; ab initio calculations; bilayer graphene nanoribbon; density functional theory; double -zeta basis set; electronic structure; energy bandgap; interlayer distance; monolayer graphene nanoribbon; single-zeta basis set; Atomic layer deposition; Density functional theory; Gold; Hydrogen; Organic materials; Photonic band gap; Polarization; Semiconductivity; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location
Arlington, TX
Print_ISBN
978-1-4244-2103-9
Electronic_ISBN
978-1-4244-2104-6
Type
conf
DOI
10.1109/NANO.2008.126
Filename
4617108
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