DocumentCode :
2739217
Title :
Theoretical Analysis Of The Threshold Current Density In GaN/AlGaN n-type Modulation-doped Strained Quantum Well Lasers
Author :
Niwa, A. ; Ohtoshi, T. ; Kuroda, Tadahiro
Author_Institution :
Hitachi, Ltd
fYear :
1997
fDate :
14-18 July 1997
Firstpage :
287
Lastpage :
288
Keywords :
Aluminum gallium nitride; Epitaxial layers; Gallium nitride; Light emitting diodes; Optical mixing; Optical polarization; Radiative recombination; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-3889-8
Type :
conf
DOI :
10.1109/CLEOPR.1997.610987
Filename :
610987
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2739217
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