Title :
Very high precision analog trimming using floating gate MOSFETS
Author :
Sweeney, J. ; Geiger, R.
Author_Institution :
Motorola Adv. Products Res. & Dev. Lab., Phoenix, AZ, USA
Abstract :
The addition of a floating gate MOS transistor option to basic CMOS or BiMOS processes is becoming recognized as a viable option with improvements in thin gate technology and the practical acceptance of increased process complexity. The use of the devices as infinite resolution nonvolatile storage devices and as precision analog trim elements are discussed. Experimental results focusing on the programming resolution and time-stability of the charge retention are presented
Keywords :
BIMOS integrated circuits; CMOS integrated circuits; MOS integrated circuits; insulated gate field effect transistors; linear integrated circuits; semiconductor storage; charge retention; dynamic programming scheme; floating gate MOSFETS; high precision analog trimming; periodic refreshing; programming resolution; time-stability;
Conference_Titel :
Circuit Theory and Design, 1989., European Conference on
Conference_Location :
Brighton
