Title :
Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure
Author :
Semra, L. ; Telia, A. ; Kaddeche, M. ; Soltani, A.
Author_Institution :
Electronics Department, Engineering Sciences Faculty, Mentouri University of Constantine UMC, Constantine, Algeria
Abstract :
In this work AlxIn1-xN/GaN heterostructure is considered taking into account the effects of spontaneous and piezoelectric polarizations on sheet carrier concentration versus alloy composition. It is found that piezoelectric polarization decreases from (14.8×10-6 C/cm2) to (-5.25×10-6 C/cm2). Lattice matching appears for alloy composition between x = 0.81 and x = 0.82 when the piezoelectric polarization vanishes. The induced polarization varies from (-14×10-6 C/cm2) to (10.85×10-6 C/cm2). The calculated sheet carrier concentration is 6.3×1012, 1.73, 2.88 and 4.08×1013cm-2 for alloy compositions x = 0.75, 0.80, 0.85 and 0.90 respectively. Also barrier thickness on sheet carrier concentration is studied.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; dielectric polarisation; gallium compounds; indium compounds; piezoelectric materials; wide band gap semiconductors; AlxIn1-xN-GaN; heterostructure materials; lattice matching; piezoelectric polarization; sheet carrier concentration; spontaneous polarization effects; Aluminum gallium nitride; Charge carrier density; Gallium nitride; HEMTs; Lattices; Piezoelectric polarization; AlInN; GaN; HEMT; III-nitrides; piezoelectric polarization;
Conference_Titel :
Engineering and Technology (ICET), 2012 International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4673-4808-9
DOI :
10.1109/ICEngTechnol.2012.6396158
