DocumentCode :
2739491
Title :
Nano-Crossbar Arrays for Nonvolatile Resistive RAM (RRAM) Applications
Author :
Nauenheim, C. ; Kügeler, C. ; Rüdiger, A. ; Waser, R. ; Flocke, A. ; Noll, T.G.
Author_Institution :
Inst. of Solid State Res. - IFF-6, Forschungszentrum Julich GmbH, Julich
fYear :
2008
fDate :
18-21 Aug. 2008
Firstpage :
464
Lastpage :
467
Abstract :
We present a fast and flexible method for the fabrication of nano-crossbar arrays with a feature size of 100 nm. TiO2 is integrated and electrically characterized as the nonvolatile resistively switching material. This structure serves as a key component for the investigation of novel high density nonvolatile resistive RAM cores.
Keywords :
nanolithography; nanopatterning; random-access storage; semiconductor storage; titanium compounds; TiO2-Ti; device fabrication; nanocrossbar arrays; nonvolatile resistive RAM; nonvolatile resistively switching material; Circuits; Electrodes; Electron beams; Fabrication; Lithography; Nonvolatile memory; Random access memory; Read-write memory; Resists; Solids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
Type :
conf
DOI :
10.1109/NANO.2008.141
Filename :
4617123
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2739491
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