DocumentCode
2739537
Title
The characterization of normal incidence Ge/Si avalanche photodiodes (APDs) at low temperatures
Author
Dai, Daoxin ; Bowers, John E. ; Kang, Yimin
Author_Institution
ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
fYear
2011
fDate
10-12 Jan. 2011
Firstpage
121
Lastpage
122
Abstract
A normal incidence Ge/Si avalanche photodiode (APD) with the separate-absorption-charge-multiplication structure is characterized when the temperature ranges from 78K to 330K. At low temperature (78K), the dark current is depressed significantly as expected, which helps to detect a weak optical signal (as low as 1nW).
Keywords
Ge-Si alloys; avalanche photodiodes; dark conductivity; elemental semiconductors; germanium; silicon; Ge-Si; dark current; low temperature normal incidence; normal incidence avalanche photodiode; separate-absorption-charge-multiplication structure; temperature 78 K to 330 K; weak optical signal detection; Breakdown voltage; Current measurement; Dark current; Silicon; Temperature dependence; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Winter Topicals (WTM), 2011 IEEE
Conference_Location
Keystone, CO
Print_ISBN
978-1-4244-8428-7
Type
conf
DOI
10.1109/PHOTWTM.2011.5730077
Filename
5730077
Link To Document