DocumentCode
2739622
Title
Hybrid III–V silicon evanescent lasers with vertical sidewalled gratings
Author
Veerasubramanian, Venkat ; Beaudin, Guillaume ; Giguère, Alexandre ; LeDrogoff, Boris ; Aimez, Vincent ; Kirk, Andrew G.
Author_Institution
McGill Univ., Montréal, QC, Canada
fYear
2011
fDate
10-12 Jan. 2011
Firstpage
133
Lastpage
134
Abstract
A hybrid III-V silicon evanescent laser with sidewalled gratings as the feedback element, and having 60% waveguide confinement is proposed. The device is fabricated using e-beam lithography, and low-temperature plasma assisted direct bonding.
Keywords
III-V semiconductors; bonding processes; diffraction gratings; distributed feedback lasers; electron beam lithography; elemental semiconductors; indium compounds; laser feedback; optical fabrication; plasma materials processing; semiconductor lasers; silicon; waveguide lasers; InP-Si; e-beam lithography; feedback element; hybrid III-V silicon evanescent lasers; low-temperature plasma assisted direct bonding; vertical sidewalled gratings; waveguide confinement; Distributed feedback devices; Gratings; Laser feedback; Laser modes; Optical waveguides; Silicon; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Winter Topicals (WTM), 2011 IEEE
Conference_Location
Keystone, CO
Print_ISBN
978-1-4244-8428-7
Type
conf
DOI
10.1109/PHOTWTM.2011.5730083
Filename
5730083
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