Title :
Electron Transport in Boron Fullerenes
Author :
He, Haiying ; Pandey, Ravindra ; Boustani, Ihsan ; Karna, Shashi P.
Author_Institution :
Dept. of Phys. & Multi-scale Technol. Inst., Michigan Technol. Univ., Houghton, MI
Abstract :
The electron transport properties of B80 fullerene is studied using first-principles density functional theory in conjunction with the Landauer-Biittiker quantum transport formalism. The electron transmission in B80 fullerene is calculated to be much higher than that in C60 fullerene in the Fermi-level region. The enhanced transmission in the B80 fullerene is attributed to its spatially extended charge distribution in delocalized bonds.
Keywords :
Fermi level; boron; density functional theory; fullerenes; localised states; B80; Fermi-level; Landauer-Buttiker quantum transport formalism; boron fullerenes; delocalized bonds; electron transmission; electron transport properties; first-principles density functional theory; Boron; Chemical technology; Density functional theory; Electrodes; Electrons; Gaussian processes; Geometry; Gold; Scattering; Semiconductor nanostructures;
Conference_Titel :
Nanotechnology, 2008. NANO '08. 8th IEEE Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
978-1-4244-2103-9
Electronic_ISBN :
978-1-4244-2104-6
DOI :
10.1109/NANO.2008.150
